Features
• DLA SMD #5962-15219
• Fabricated using P6SOI process technology
- Provides latch-up immunity
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<500Ω (typical)
• Flexible split rail operation
- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V
- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V
• Analog overvoltage range (from ground). . . . . . . . . . . . .±35V
• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)
• Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)
• Break-before-make switching
• Grounded metal lid (internally connected)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation acceptance testing
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)
NOTE: Product capability established by initial characterization. All
subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)
wafer-by-wafer.
• SEE hardness (see SEE report for details)
- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg