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HOA1870 Datenblatt (PDF) - Honeywell Solid State Electronics Center

HOA1870 Datasheet PDF - Honeywell Solid State Electronics Center
Teilenummer HOA1870
Download  HOA1870 Download
Filegröße   1025.5 Kbytes
Page   18 Pages
Hersteller  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Bauteilbeschribung Infrared Sensors Line Guide

HOA1870 Datasheet (PDF)

Go To PDF Page Download Datenblatt
HOA1870 Datasheet PDF - Honeywell Solid State Electronics Center

Teilenummer HOA1870
Download  HOA1870 Click to download

Filegröße   1025.5 Kbytes
Page   18 Pages
Hersteller  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Bauteilbeschribung Infrared Sensors Line Guide

HOA1870 Datenblatt (HTML) - Honeywell Solid State Electronics Center


HOA1870 Produktdetails

FEATURES
REFLECTIVE SENSORS
HOA1395.
Features: Side-looking plastic package
• Phototransistor output
• Infrared emitter and phototransistor detector in a single package
• Low profile for design flexibility
• Designed for short-distance detection
• Enhanced sensitivity • Unfocused for sensing diffused surfaces
Benefits: Miniature infrared sensor designed to sense reflective objects at short distances. Infrared emitter and phototransistor are mounted side-by-side with an integral barrier to minimize crosstalk.
HOA0149.
Features: Phototransistor output
• Focused for maximum response
• Low-profile housing
• Plastic ABS molded housing
Benefits: An infrared emitter and phototransistor encased side-by-side on converging optical axes. Phototransistor responds to radiation from an infrared transmitter only when a reflective object passes within its field of view.
HOA1180.
Features: Choice of phototransistor or photodarlington output
• Enhanced sensitivity
• Wide operating temperature -55 °C to 100 °C [-67 °F to 212 °F]
• 305 mm [12 in] min. 28 AWG PVC insulated wire leads
• Metal can packaged components
Benefits: Consists of an infrared emitter and phototransistor or photodarlington encased side-by-side on converging axes. Detector responds to radiation from an infrared emitter only when a reflective object passes within its field of view.
HOA1397.
Features: Choice of phototransistor or photodarlington output
• Low profile for design sensitivity
• Unfocused for sensing diffused surfaces
• Plastic-molded components
Benefits: An infrared emitter and phototransistor or photodarlington encased side-by-side on parallel axes. Detector responds to radiation from infrared emitter only when a reflective object passes within its field of view. Potential applications include presence sensing, motion sensing, movement detection, and counting.
HOA1405.
Features: Phototransistor output
• Focused for maximum response
• Ambient light and dust protective filter
• Plastic-molded components
Benefits: An infrared emitter and phototransistor encased side-by-side on converging optical axes. Phototransistor responds to radiation from an infrared emitter only when a reflective object passes within its field of view. Employs an IR transmissive filter to minimize the effects of visible ambient light and to provide a smooth optical face which prevents the accumulation of airborne




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Über Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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