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TPS2310IPW Datenblatt (PDF) - Texas Instruments

TPS2310IPW Datasheet PDF - Texas Instruments
Teilenummer TPS2310IPW
Download  TPS2310IPW Download
Filegröße   688.34 Kbytes
Page   29 Pages
Hersteller  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Bauteilbeschribung DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER

TPS2310IPW Datasheet (PDF)

Go To PDF Page Download Datenblatt
TPS2310IPW Datasheet PDF - Texas Instruments

Teilenummer TPS2310IPW
Download  TPS2310IPW Click to download

Filegröße   688.34 Kbytes
Page   29 Pages
Hersteller  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments
Bauteilbeschribung DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER

TPS2310IPW Datenblatt (HTML) - Texas Instruments


TPS2310IPW Produktdetails

1FEATURES
• Dual-Channel High-Side MOSFET Drivers
• IN1: 3 V to 13 V; IN2: 3 V to 5.5 V
• Output dV/dt Control Limits Inrush Current
• Independent Circuit-Breaker With
Programmable Overcurrent Threshold and
Transient Timer
• CMOS- and TTL-Compatible Enable Input
• Low, 5-μA Standby Supply Current (Max)
• Available in 16-Pin SOIC and TSSOP Package
• –40°C to 85°C Ambient Temperature Range
• Electrostatic Discharge Protection

APPLICATIONS
• Hot-Swap/Plug/Dock Power Management
• Hot-Plug PCI, Device Bay
• Electronic Circuit Breaker

DESCRIPTION
The TPS2320 and TPS2321 are dual-channel hotswap
controllers that use external N-channel
MOSFETs as high-side switches in power
applications. Features of these devices, such as
overcurrent protection (OCP), inrush-current control,
and the ability to discriminate between load transients
and faults, are critical requirements for hot-swap
applications.
A
The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each
internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance
the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs,
reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense
overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents
during power-state transitions, to disregard transients for a programmable period.




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