1 Features
1• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results
– Device Temperature Grade 1 high–
Device HBM ESD Classification Level 1C
– Device CDM ESD Classification Level C4A
• Drives Both a High-Side and Low-Side N-Channel
MOSFET
• 1-A Peak Output Current (1.0-A Sink/1.0-A
Source)
• Independent TTL/CMOS Compatible Inputs
• Bootstrap Supply Voltage to 108-V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000-pF Load with 15-ns Rise and Fall
Times
• Excellent Propagation Delay Matching (2 ns
Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Thermally-Enhanced WSON-8 Package

2 Applications
• Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters

3 Description
The LM5109B-Q1 is a cost effective, high voltage
gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous
buck or a half bridge configuration. The floating high–
side driver is capable of working with rail voltages up
to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds.
The robust level shift technology operates at high
speed while consuming low power and providing
clean level transitions from the control input logic to
the high-side gate driver. Under-voltage lockout is
provided on both the low-side and the high-side power rails. The device is available in the thermally
enhanced WSON(8) packages.