1 Features
• Low on-resistance
• Ultra-low Qg and Qgd
• Ultra-small footprint
– 0.7mm × 0.6mm
• Low profile
– 0.22mm max height
• Integrated ESD protection diode
• Lead and halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Battery applications
• Handheld and mobile applications

3 Description
This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing a substantial
reduction in footprint size. The integrated 10kΩ clamp
resistor (RC) allows the gate voltage (VGS) to be
operated above the maximum internal gate oxide
value of –6V, depending on duty cycle. The gate
leakage (IGSS) through the diode increases as VGS is
increased above –6V.