General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications:load switching and power management, battery charging circuits, and DC/DC conversion.

Features
· –2A, 20 V RDS(ON) = 70 mW @ VGS = –4.5 V RDS(ON) = 110 mW @ VGS = –2.5 V
· Low gate charge (7.2 nC typical).
· Highperformance trench technology for extremely low RDS(ON) .
· High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.