| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 STMicroelectronics |
NAND01G-B
|
631Kb / 64P |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
13-Feb-2006 |
|
NAND01G-B2B
|
711Kb / 62P |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
23-Nov-2006 |
|
NAND512R3A2C
|
674Kb / 51P |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
08-Feb-2007 |
 Numonyx B.V |
M29W800FB-KGD
|
285Kb / 15P |
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory
|
|
NAND01G-B2B
|
1Mb / 60P |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
|
NAND512R3A2C
|
1Mb / 51P |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
|
NAND08GW3C2A
|
1Mb / 58P |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
|
NAND08GW3C2B
|
1Mb / 60P |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
|
NAND512R3A2SN6F
|
1Mb / 55P |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
|
NAND01GR3B2C
|
1Mb / 67P |
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory
January 2010 Rev 5 |