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RP111H231B Datenblatt (PDF) - Nisshinbo Micro Devices Inc.
RP111H231B Datasheet PDF - Nisshinbo Micro Devices Inc.
Teilenummer RP111H231B
Download  RP111H231B Download
Filegröße   2046.82 Kbytes
Page   45 Pages
Hersteller  NISSHINBO [Nisshinbo Micro Devices Inc.]
Direct Link  https://www.nisshinbo-microdevices.co.jp/en/
Logo NISSHINBO - Nisshinbo Micro Devices Inc.
Bauteilbeschribung Good Transient Response Low Voltage 500mA LDO

RP111H231B Datasheet (PDF)

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RP111H231B Datasheet PDF - Nisshinbo Micro Devices Inc.

Teilenummer RP111H231B
Download  RP111H231B Click to download

Filegröße   2046.82 Kbytes
Page   45 Pages
Hersteller  NISSHINBO [Nisshinbo Micro Devices Inc.]
Direct Link  https://www.nisshinbo-microdevices.co.jp/en/
Logo NISSHINBO - Nisshinbo Micro Devices Inc.
Bauteilbeschribung Good Transient Response Low Voltage 500mA LDO

RP111H231B Datenblatt (HTML) - Nisshinbo Micro Devices Inc.


RP111H231B Produktdetails

FEATURES
• Supply Current ......................................................Typ. 80μA
• Standby Current....................................................Typ. 0.1μA
• Dropout Voltage ....................................................Typ. 0.23V (IOUT=500mA, VOUT=2.5V)
• Ripple Rejection....................................................Typ. 75dB (f=1kHz)
Typ. 70dB (f=10kHz)
• Output Voltage Accuracy.......................................±0.8% (VOUT ≥1.8V)
• Output Voltage Temperature Coefficient ...............Typ. ±30ppm/°C (VOUT ≥1.8V)
• Line Regulation .....................................................Typ. 0.02%/V
• Packages ..............................................................DFN1212-6, SOT-23-5, SOT-89-5,
• Input Voltage Range .............................................1.4V to 5.25V
• Output Voltage Range...........................................0.7V to 3.6V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Built-in Foldback Protection Circuit .......................Typ. 50mA (Current at short mode)
• Thermal Shutdown Temperature...........................165°C
• Inrush Current Limit ..............................................Typ.400mA (for 180μs after start-up)
• Ceramic capacitors are recommended to be used with this IC .....1.0μF or more




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