1 Features
• Total ionizing dose (TID) characterized
– Radiation hardness assurance (RHA) availability of up to 100krad(Si)
• Single-Event Effects (SEE) characterized
– Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75MeV-cm2/mg
– Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75MeV-cm2/mg
• Input voltage range from 4.5V to 14V
• 12A maximum output current
• High efficiency (typical values for VIN = 12V, VOUT = 3.3V, fSW = 500kHz)
– 91% (CFP), 91% (plastic) at 2A
– 87% (CFP), 88% (plastic) at 9A
– 85% (CFP), 86% (plastic) at 12A
• Integrated HS 45mΩ(CFP)/31mΩ(plastic) and LS 33mΩ(CFP)/27mΩ(plastic) MOSFETs (typ at 12V)
• Flexible switching frequency options:
– 100kHz to 1MHz, accurate (±15% or better), adjustable internal oscillator
– 100kHz to 1MHz external sync capability
– SYNC pins can be configured 90° out of phase to parallel up to 4 devices
• 0.6V ±0.67% (CFP), ±0.83% (plastic) voltage reference over line, temperature, and radiation
• Differential remote sensing
• Selectable current limit
• FAULT input pin for flexible fault management
• Monotonic start-up into prebiased outputs
• Adjustable slope compensation and soft-start
• Adjustable input enable and power-good output for power sequencing
• Power-good output monitor for undervoltage and overvoltage
• Supports inverting buck-boost topology
• Plastic packages outgas tested per ASTM E595
• Available in military (–55°C to 125°C) temperature range