Description
The CHA7012 chip is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability.

Main Features
■ Frequency band: 9.2 -10.4GHz
■ Output power (P3dB ): 38.5dBm
■ High linear gain: > 20dB
■ High PAE: > 38%
■ Two biasing modes:
    -VDigital control thanks to TTL interface
    -VAnalog control thanks to biasing circuit
■ Chip size: 5.00 x 3.68 x 0.1mm