[Description]
The 2N3902 is a silicon NPN transistor in a TO-3
NPN
type Package designed for use in high voltage
inverters, converters, switching regulators and
line Operated amplifiers.
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Emitter Voltage V 700
CEX
Collector-Emitter Voltage V 400 V
CEO(sus)
Emitter Base Voltage V 5
EB
Collector Current -Continuous I 3.5
C
A
Peak Base Current I 2
B
Total Device Dissipation -(T = +75°C), 100 W
C P
Derate Above 95°C D 1.33 W/°C
Operating Junction Temperature Range T -65 to +150
J °C
Storage Temperature Range, T -65 to +200
stg
Thermal Resistance, Junction-to-Case R 0.75 °C/W
thJC
Maximum Lead temperature
T +275 °C
(During Soldering, 1/8" from case, 5sec) L
Electrical Characteristics: (T = +25°C Unless otherwise specified)
C
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage V l = 100mA, I = 0 325 - V
CEO(SUS) C B
Collector Cutoff Current I V = 400V, V = 0 0.25
CEO CE BE - mA
Emitter-Base Voltage I I = 100mA. l = 5V 5
EBO E C
ON Characteristics (Note 2)
DC Current Gain h V = 5V, l = 1A 30 90
FE CE C
Collector-Emitter Saturation Voltage V 2.5
CE(sat) l = 2.5A, l = 0.5A - V
Base-Emitter Saturation Voltage V C B 2
BE(sat)
Dynamic Characteristics
Current Gain-Bandwidth Product f V = 10V, l = 200mA, f = 1MHz 2.8 - MHz
T CE C