DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

able manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.030 Ω @ 4.5 V

■ TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)

■ STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY