Features
• For general purpose applications
• This diode features low turn-on voltage.
   The devices are protected by a PN
   junction guard ring against excessive
   voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
   which is protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices,
   steering, biasing and coupling diodes for fast
   switching and low logic level applications
• This diode is also available in a DO-35 case with
   type designation BAT86.
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications
• Applications where a very low forward voltage is required