| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
TC514100AP
|
635Kb / 21P |
4,194,304 WORD x BIT DYNAMIC RAM
|
|
TC514100APL
|
632Kb / 21P |
4,194,304 WORD x BIT DYNAMIC RAM
|
|
TC514101AP
|
721Kb / 23P |
4,194,304 WORD x 1 BIT DYNAMIC RAM
|
|
TC514101J
|
676Kb / 23P |
4,194,304 x 1 BIT DYNAMIC RAM
|
|
TC514102AP
|
601Kb / 20P |
4,194,304 x 1 BIT DYNAMIC RAM
|
|
TC514102J
|
681Kb / 22P |
4,194,304 x 1 BIT DYNAMIC RAM
|
|
THM94000S
|
396Kb / 16P |
4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
|
 Vanguard International ... |
VG26VS17400E
|
209Kb / 25P |
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
 Toshiba Semiconductor |
TC5116400BSJ
|
442Kb / 8P |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
|
TC5116400J
|
1Mb / 25P |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|