Description
The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features
● -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V
● -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V
● -30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability

Application
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
● LCD Display inverter