Description
The circuit is a three-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Main Features
• Broad band performance 18-31GHz
• 2.5dB noise figure
• 22dB gain, ± 1dB gain flatness
• Low DC power consumption, 55mA
• 20dBm 3rd order intercept point
• Chip size : 2,170 x 1,270x 0.1mm