General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
   supply voltage of 28 V and an IDq of 1100 mA:
   ◆ Average output power = 30 W
   ◆ Power gain = 17 dB (typ)
   ◆ Efficiency = 28.5 %
   ◆ IMD3 = −37 dBc
   ◆ ACPR = −40 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF power amplifiers W-CDMA base stations and multi carrier applications in the
   2000 MHz to 2200 MHz frequency range