High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications

• Built-in schottky barrier diode
   Low forward voltage: VDSF = 0.6V(Max.)
• High-speed switching.
• Small gate charge.: QSW ＝ 11 nC(Typ.)
• Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 40 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)