| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Samsung semiconductor |
K4E170411D
|
256Kb / 21P |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out
|
|
K4E660412D
|
415Kb / 21P |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
|
K4E661612B
|
885Kb / 36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
|
K4E661612C
|
884Kb / 36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
|
KM416C4004C
|
946Kb / 36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
|
KM416V4004C
|
808Kb / 36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
|
KM44C4003C
|
376Kb / 20P |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
|
|
K4E660412E
|
192Kb / 21P |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
|
K4E660411D
|
418Kb / 21P |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
 Alliance Semiconductor ... |
AS4CM4EOQ
|
353Kb / 16P |
4M X 4 CMOS Quad CAS DRAM (EDO) family
|