| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
ON Semiconductor |
NTHD4401P
|
66Kb / 8P |
Power MOSFET ??0 V, ??.0 A, Dual P?묬hannel, ChipFET
October, 2004 ??Rev. 3 |
|
NTD12N10
|
77Kb / 8P |
Power MOSFET 12 Amps, 100 Volts N?묬hannel Enhancement?묺ode DPAK
August, 2004 ??Rev. 6 |
|
NTMS10P02R2
|
92Kb / 6P |
Power MOSFET -10 Amps, -20 Volts P?묬hannel Enhancement?묺ode Single SO?? Package
December, 2003 ??Rev. 2 |
|
NTB30N20
|
85Kb / 8P |
Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK
April, 2004 ??Rev. 3 |
|
NTS4173P
|
114Kb / 6P |
Power MOSFET ??0 V, ??.3 A, Single P?묬hannel, SC??0
September, 2008 ??Rev. 0 |
|
NTMS4N01R2
|
83Kb / 6P |
Power MOSFET 4.2 Amps, 20 Volts N?묬hannel Enhancement?묺ode Single SO?? Package
January, 2006 ??Rev. 3 |
|
NTS2101P
|
66Kb / 5P |
Power MOSFET ??.0 V, ??.4 A, Single P?묬hannel, SC??0
March, 2006 ??Rev. 1 |
|
NTLUS3A18PZTCG
|
153Kb / 6P |
Power MOSFET ??0 V, ??.2 A, Single P?묬hannel,
July, 2012 ??Rev. 3 |
|
NTTS2P03R2G
|
80Kb / 6P |
Power MOSFET ??.48 Amps, ??0 Volts
June, 2005 ??Rev. 2 |
|
NTMS4P01R2
|
232Kb / 8P |
P?묬hannel Enhancement?묺ode Power MOSFET
August, 2006 ??Rev. 1 |
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
