| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
ON Semiconductor |
NTB125N02R
|
68Kb / 6P |
Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK
October, 2003 ??Rev. 4 |
|
NGB8206N
|
118Kb / 7P |
Ignition IGBT 20 A, 350 V, N?묬hannel D2PAK
August, 2006 ??Rev. 6 |
|
NGB8207N
|
91Kb / 7P |
Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK
January, 2007 ??Rev. 0 |
|
NGB8207AN
|
153Kb / 7P |
Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK
July, 2009 ??Rev. 0 |
|
NTB5404N
|
133Kb / 7P |
Power MOSFET 40 V, 136 A, Single N?묬hannel, D2PAK & TO??20
July, 2010 ??Rev. 2 |
|
NTB5405N
|
114Kb / 7P |
Power MOSFET 40 V, 116 A, Single N?묬hannel, D2PAK
November, 2008 ??Rev. 2 |
|
NTP18N06
|
90Kb / 8P |
Power MOSFET 15 A, 60 V, N?묬hannel TO??20 & D2PAK
August, 2005 ??Rev. 4 |
|
NVTFS5826NL
|
117Kb / 6P |
60 V, 24 m, 20 A, Single N?묬hannel Power MOSFET
January, 2011 ??Rev. 0 |
|
NVB60N06T4G
|
165Kb / 9P |
Power MOSFET 60 V, 60 A, N?묬hannel D2PAK
October, 2011 ??Rev. 0 |
|
NTB75N03RG
|
96Kb / 8P |
Power MOSFET 75 Amps, 25 Volts N?묬hannel D2PAK, TO??20
June, 2006 ??Rev. 4 |
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
