INTRODUCTION
Sharp’s LH28F016LL 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3 V single voltage operation and very high read/write performance, the LH28F0166LL is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• User-Configurable x8 or x16 Operation
• 3 V Write/Erase Operation (3 V VPP)
   – 2.7 - 3.6 V Write-Erase Operation
• 120 ns Maximum Access Time (VCC = 3.0 V)
• 150 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Blocks (64K)
• 0.48 MB/sec Write Transfer Rate
• 100,000 Erase Cycles per Block
• Revolutionary Architecture
   – Pipelined Command Execution
   – Write During Erase
   – Command Superset of Sharp LH28F016SU
• 10 µA (MAX.) ICC in CMOS Standby
• 5 µA (MAX.) Deep Power-Down
• State-of-the Art 0.6 µm ETOX™ Flash Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package