DESCRIPTION
The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology.

FEATURES
• Access time: 70 ns (MAX.)
• Current consumption:
   Operating: 30 mA (MAX.)
   5 mA (MAX.) (tRC, tWC = 1 µs)
   Standby: 60 µA (MAX.)
• Data Retention:
   1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)
• Single power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Fully-static operation
• Three-state output
• Not designed or rated as radiation hardened
• Package: 32-pin 6 × 10 mm CSP
• N-type bulk silicon