FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices,   steering, biasing and coupling diodes for fast switching and low logic level applications
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS
• Applications where a very low forward voltage is required