This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology.

Advanced Information
• 16 777 216 words by 4-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
    max. 396 mW active ( HYB 3164400AJ/AT(L) -40)
    max. 324 mW active ( HYB 3164400AJ/AT(L) -50)
    max. 270 mW active ( HYB 3164400AJ/AT(L) -60)
    max. 558 mW active ( HYB 3165400AJ/AT(L) -40)
    max. 468 mW active ( HYB 3165400AJ/AT(L) -50)
    max. 378 mW active ( HYB 3165400AJ/AT(L) -60)
    7.2 mW standby (LVTTL)
    3.24 mW standby (LVCMOS)
    720 µW standby for L-versions
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
    RAS-only refresh, hidden refresh and self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT)
    4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package
    P-SOJ-32-1 400 mil HYB 3164(5)400AJ
    P-TSOPII-32-1 400 mil HYB 3164(5)400AT