Description

The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed.

The CXK591000TM/YM/M is a suitable RAM for portable equipment with battery back up and parity bit.

Features

• Fast access time

  CXK591000TM/YM/M (Access time)

    -55LL 55ns (Max.)

    -70LL 70ns (Max.)

    -10LL 100ns (Max.)

• Low standby current

  CXK591000TM/YM/M

    -55LL/70LL/10LL 24µA (Max.)

• Low data retention current

  CXK591000TM/YM/M

    -55LL/70LL/10LL 14µA (Max.)

• Single +5V supply: 5V ± 10%.

• Low voltage date retention: 2.0V (Min.)

• Broad package line-up

  CXK591000TM/YM

    8mm ×20mm 32 pin TSOP Package

  CXK591000M 525mil 32 pin SOP Package