DESCRIPTION
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
   MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz