KU024N06P Datenblatt(PDF)

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KU024N06P Datenblatt (PDF) - KEC(Korea Electronics)

KU024N06P Datasheet PDF - KEC(Korea Electronics)


Teilenummer	KU024N06P

Download	KU024N06P Download

Filegröße	1059.97 Kbytes

Page	7 Pages

Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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Bauteilbeschribung

N-ch Trench MOS FET

KU024N06P Datasheet (PDF)

Download Datenblatt


Teilenummer	KU024N06P

Download	KU024N06P Click to download

Filegröße	1059.97 Kbytes

Page	7 Pages

Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

Logo

Bauteilbeschribung	N-ch Trench MOS FET

KU024N06P Datenblatt (HTML) - KEC(Korea Electronics)

KU024N06P Datasheet HTML 1Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 2Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 3Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 4Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 5Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 6Page - KEC(Korea Electronics)

KU024N06P Datasheet HTML 7Page - KEC(Korea Electronics)

KU024N06P Produktdetails

General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications

FEATURES
• VDSS= 60V, ID= 200A
• Drain-Source ON Resistance :
RDS(ON)=2.4mΩ (Max.) @VGS = 10V

Ähnliche Beschreibung - KU024N06P

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	KUS086N10F	78Kb / 7P	N-ch Trench MOS FET
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