Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Renesas Technology Corp |
2SC5606
|
201Kb / 9P |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
|
NESG2031M05
|
158Kb / 14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
2SC5761
|
305Kb / 16P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
May 2003 |
NESG2021M05
|
159Kb / 14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
California Eastern Labs |
NESG2046M33
|
292Kb / 4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
NESG204619
|
320Kb / 4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NE68719
|
189Kb / 5P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
Renesas Technology Corp |
2SC3355
|
248Kb / 10P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
2SC4093
|
175Kb / 9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
California Eastern Labs |
NE85634
|
216Kb / 6P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|