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DS1994 Datenblatt (PDF) - Dallas Semiconductor

DS1994 Datasheet PDF - Dallas Semiconductor
Teilenummer DS1994
Download  DS1994 Download
Filegröße   254.71 Kbytes
Page   22 Pages
Hersteller  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor
Bauteilbeschribung 4kb Plus Time Memory iButton

DS1994 Datasheet (PDF)

Go To PDF Page Download Datenblatt
DS1994 Datasheet PDF - Dallas Semiconductor

Teilenummer DS1994
Download  DS1994 Click to download

Filegröße   254.71 Kbytes
Page   22 Pages
Hersteller  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor
Bauteilbeschribung 4kb Plus Time Memory iButton

DS1994 Datenblatt (HTML) - Dallas Semiconductor


DS1994 Produktdetails

iButton DESCRIPTION
The DS1994 Memory iButton is a rugged read/write data carrier that acts as a localized database, easily accessible with minimal hardware. The nonvolatile memory and optional timekeeping capability offer a simple solution to storing and retrieving vital information pertaining to the object to which the iButton is attached. Data is transferred serially through the 1-Wire protocol that requires only a single data lead and a ground return.
   
SPECIAL FEATURES
■ 4096 bits of Read/Write Nonvolatile
    Memory
■ 256-bit Scratchpad Ensures Integrity of Data
    Transfer
■ Memory Partitioned into 256-bit Pages for
    Packetizing Data
■ Data Integrity Assured with Strict
    Read/Write Protocols
■ Contains Real-Time Clock/Calendar in
    Binary Format
■ Interval Timer Can Automatically
    Accumulate Time When Power is Applied
■ Programmable Cycle Counter can
    Accumulate the Number of System PowerOn/Off Cycles
■ Programmable Alarms Can Be Set to
    Generate Interrupts for Interval Timer,
    RealTime Clock, and/or Cycle Counter
■ Write-Protect Feature Provides Tamperproof
    Time Data
■ Programmable Expiration Date That Limits
    Access to SRAM and Timekeeping
■ Clock Accuracy is Better Than ±2 Minutes/
    Month at 25°C
■ Operating Temperature Range from -40°C to
    +70°C
■ Over 10 Years of Data Retention
   
COMMON iButton® FEATURES
■ Unique, Factory-Lasered, and Tested 64-bit
    Registration Number (8-bit Family Code +
    48-bit Serial Number + 8-bit CRC Tester)
    Assures Absolute Traceability Because No
    Two Parts Are Alike
■ Multidrop Controller for MicroLAN
■ Digital Identification and Information by
    Momentary Contact
■ Chip-Based Data Carrier Compactly Stores
    Information   
■ Data Can Be Accessed While Affixed to
    Object
■ Economically Communicates to Bus Master
    with a Single Digital Signal at 16.3kbps
■ Standard 16mm Diameter and 1-Wire®
    Protocol Ensure Compatibility with iButton
    Family
■ Button Shape is Self-Aligning with CupShaped Probes
■ Durable Stainless Steel Case Engraved with
    Registration Number Withstands Harsh
    Environments
■ Easily Affixed with Self-Stick Adhesive
    Backing, Latched by its Flange, or Locked
    with a Ring Pressed onto its Rim
■ Presence Detector Acknowledges when
    Reader First Applies Voltage
■ Meets UL#913 (4th Edit.); Intrinsically Safe
    Apparatus, Approved under Entity Concept
    for Use in Class I, Division 1, Group A, B, C
    and D Locations
   




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Über Dallas Semiconductor


Dallas Semiconductor war eine amerikanische Firma, die 1984 gegründet wurde und ein Lieferant von gemischten Signal- und Digital-Halbleitern war.
Das Unternehmen hatte seinen Hauptsitz in Dallas, Texas, und war bekannt für seine innovativen Produkte und seine Technologie im Bereich Echtzeituhren, Temperatursensoren und anderer integrierter Schaltkreise.
Im Jahr 2002 wurde Dallas Semiconductor von Maxim Integrated, einer multinationalen Halbleiterfirma, übernommen und eine Tochtergesellschaft von Maxim.
Die Dallas Semiconductor -Marke ist nicht mehr verwendet, aber ihre Produkte und Technologie sind weiterhin Teil des Maxim -Portfolios.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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