| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 California Eastern Labs |
NX6311EH
|
321Kb / 11P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
 Renesas Technology Corp |
NX8346TS
|
172Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8369TB
|
213Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349TB
|
211Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8369TB
|
214Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8346TS
|
195Kb / 8P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8346TB
|
205Kb / 9P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8341
|
372Kb / 15P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 Renesas Technology Corp |
NX8349YK
|
253Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349TB
|
204Kb / 9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|