2SC5337 Datenblatt(PDF) - California Eastern Labs

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2SC5337 Datenblatt (PDF) - California Eastern Labs

2SC5337 Datasheet PDF - California Eastern Labs


Teilenummer	2SC5337

Download	2SC5337 Download

Filegröße	877.51 Kbytes

Page	6 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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Bauteilbeschribung

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

2SC5337 Datasheet (PDF)

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2SC5337 Datasheet PDF - California Eastern Labs


Teilenummer	2SC5337

Download	2SC5337 Click to download

Filegröße	877.51 Kbytes

Page	6 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

Logo

Bauteilbeschribung	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

2SC5337 Datenblatt (HTML) - California Eastern Labs

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2SC5337 Datasheet HTML 6Page - California Eastern Labs

2SC5337 Produktdetails

FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536

Ähnliche Teilenummer - 2SC5337

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC5337	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5337	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency
	2SC5337-A	137Kb / 2P	RF & Microwave device
	2SC5337-AZ	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency
	2SC5337-T1	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency

Ähnliche Beschreibung - 2SC5337

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE46234	163Kb / 7P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
California Eastern Labs	2SC5336	1Mb / 7P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4703	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

Über California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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