| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Siemens Semiconductor G... |
BUZ103S
|
121Kb / 8P |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)
|
|
BUZ104S
|
128Kb / 8P |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)
|
 Sensitron |
OM4201ST
|
44Kb / 3P |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175째C Operating Temperature
|
|
SHD125423
|
49Kb / 3P |
HERMETIC POWER SCHOTTKY RECTIFIER 175째C Maximum Operation Temperature
|
|
SHD126022
|
64Kb / 3P |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175째C Operating Temperature
|
|
SHD126122
|
64Kb / 3P |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175째C Operating Temperature
|
|
OM4201ST
|
39Kb / 2P |
SILICON SCHOTTKY RECTIFIER- Common Cathode Ultra Low Reverse Leakage 175째C Operating Temperature
|
|
SHD125622
|
40Kb / 3P |
HERMETIC POWER SCHOTTKY RECTIFIER 175째C Maximum Operation Temperature
|
|
SHD126423
|
44Kb / 3P |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175째C Operating Temperature
|
 International Rectifier |
IRFR6215TRPBF
|
247Kb / 11P |
175째C Operating Temperature
|