DESCRIPTION AND APPLICATIONS
The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.

FEATURES
♦ 23 dBm Output Power at 1-dB Compression at 15 GHz
♦ 11.5 dB Power Gain at 15 GHz
♦ 50% Power-Added Efficiency