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IRF220 Datenblatt (PDF) - New Jersey Semi-Conductor Products, Inc.

IRF220 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
Teilenummer IRF220
Download  IRF220 Download

Filegröße   135.19 Kbytes
Page   3 Pages
Hersteller  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Bauteilbeschribung Nanosecond Switching Speeds

IRF220 Datasheet (PDF)

Go To PDF Page Download Datenblatt
IRF220 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

Teilenummer IRF220
Download  IRF220 Click to download

Filegröße   135.19 Kbytes
Page   3 Pages
Hersteller  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Bauteilbeschribung Nanosecond Switching Speeds

IRF220 Datenblatt (HTML) - New Jersey Semi-Conductor Products, Inc.

IRF220 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc. IRF220 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc. IRF220 Datasheet HTML 3Page - New Jersey Semi-Conductor Products, Inc.

IRF220 Produktdetails

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.0A and 5.0A, 150V and 200V
• rDS(ON) = 0.8Ω and 1.2£i
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device




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