NPN Silicon Power Transistors SWITCHMODE Bridge Series

.. . specifically designed for use in half bridge and full bridge off line converters.

• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• Collector-Emitter Sustaining Voltage — VCEO(SUS) — 400 V
• Collector-Emitter Breakdown — V(BR)CES —650v
• State-of-Art Bipolar Power Transistor Design
• Fast Inductive Switching:
    tfj = 25 ns (Typ) @ 100°C
    tc = 50 ns (Typ) @ 100°C
    tsv = 1 us(Typ)@100°C
• Ultrafast FBSOA Specified
• 100°C Performance Specified for:
    RBSOA
    Inductive Load Switching
    Saturation Voltages
    Leakages