SS16 Datenblatt(PDF) - General Semiconductor

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SS16 Datenblatt (PDF) - General Semiconductor

SS16 Datasheet PDF - General Semiconductor


Teilenummer	SS16

Download	SS16 Download

Filegröße	80.38 Kbytes

Page	2 Pages

Hersteller	GE [General Semiconductor]

Direct Link	http://www.vishay.com

Logo

Bauteilbeschribung

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SS16 Datasheet (PDF)

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Download Datenblatt

SS16 Datasheet PDF - General Semiconductor


Teilenummer	SS16

Download	SS16 Click to download

Filegröße	80.38 Kbytes

Page	2 Pages

Hersteller	GE [General Semiconductor]

Direct Link	http://www.vishay.com

Logo

Bauteilbeschribung	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SS16 Datenblatt (HTML) - General Semiconductor

SS16 Datasheet HTML 1Page - General Semiconductor

SS16 Datasheet HTML 2Page - General Semiconductor

SS16 Produktdetails

Reverse Voltage - 20 to 60 Volts Forward Current - 1.0 Ampere

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability classification 94V-0

♦ For surface mount applications

♦ Low profile package

♦ Built-in strain relief

♦ Metal silicon junction, majority carrier conduction

♦ Low power loss, high efficiency

♦ High current capability, low forward voltage drop

♦ High surge capability

♦ For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

♦ Guardring for overvoltage protection

♦ High temperature soldering guaranteed: 250°C/10 seconds on terminals

Ähnliche Teilenummer - SS16

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Micro Commercial Compon...	SS16	187Kb / 3P	1 Amp Schottky Rectifier 20 to 100 Volts
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Ähnliche Beschreibung - SS16

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Shanghai Sunrise Electr...	SS12	16Kb / 1P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Pan Jit International I...	SX32	41Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
General Semiconductor	SS22	85Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Shanghai Sunrise Electr...	SK12	17Kb / 1P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
GOOD-ARK Electronics	SK22	182Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Comchip Technology	CDBV120	217Kb / 2P	Surface Mount Schottky Barrier Rectifier
Diotech Company.	SK52C	756Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
EIC discrete Semiconduc...	SKN0	97Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
EIC discrete Semiconduc...	SK52	97Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Pan Jit International I...	SS12F	258Kb / 3P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Shenzhen Taychipst Elec...	S510B	8Mb / 2P	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Über General Semiconductor

General Semiconductor was an American semiconductor company that specialized in the design and manufacture of discrete semiconductor components such as diodes, rectifiers, transistors, and thyristors. The company was founded in 1952 and was headquartered in Melville, New York.

General Semiconductor's products were used in a wide range of applications, including consumer electronics, automotive, industrial, and telecommunications industries. The company's product portfolio included a variety of discrete semiconductor components, such as small signal diodes, power diodes, bridge rectifiers, and transient voltage suppressors (TVS).

In 2001, Vishay Intertechnology, a leading manufacturer of discrete semiconductors and passive electronic components, acquired General Semiconductor in a stock-for-stock transaction valued at approximately $1.6 billion. Following the acquisition, General Semiconductor became a subsidiary of Vishay Intertechnology, and its products and technologies were integrated into Vishay's broad portfolio of electronic components.

Today, Vishay Intertechnology continues to provide a wide range of discrete semiconductor components, leveraging the technologies and expertise gained through the acquisition of General Semiconductor. The company's products are used in various industries, including automotive, computing, telecommunications, and industrial automation.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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