DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

FEATURES
• Super Low Noise Figure & High Associated Gain
    NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length: Lg = 0.2 µm
• Gate Width : Wg = 200 µm