HBAT54 Datenblatt(PDF) - Hi-Sincerity Mocroelectronics

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HBAT54 Datenblatt (PDF) - Hi-Sincerity Mocroelectronics

HBAT54 Datasheet PDF - Hi-Sincerity Mocroelectronics


Teilenummer	HBAT54

Download	HBAT54 Download

Filegröße	23.78 Kbytes

Page	3 Pages

Hersteller	HSMC [Hi-Sincerity Mocroelectronics]

Direct Link	http://www.hsmc.com.tw

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Bauteilbeschribung

Silicon Schottky Barrier Double Diodes

HBAT54 Datasheet (PDF)

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HBAT54 Datasheet PDF - Hi-Sincerity Mocroelectronics


Teilenummer	HBAT54

Download	HBAT54 Click to download

Filegröße	23.78 Kbytes

Page	3 Pages

Hersteller	HSMC [Hi-Sincerity Mocroelectronics]

Direct Link	http://www.hsmc.com.tw

Logo

Bauteilbeschribung	Silicon Schottky Barrier Double Diodes

HBAT54 Datenblatt (HTML) - Hi-Sincerity Mocroelectronics

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HBAT54 Produktdetails

Description
Silicon Schottky Barrier Double Diodes

• HBAT54: Single Diode, also available as double diodes.
• HBAT54A: Common Anode.
• HBAT54C: Common Cathode.
• HBAT54S: Series Connected.

Features
    These diodes feature very low turn-on voltage and fast switching. There is a PN
    junction guard ring against excessive voltage such as electronics attic discharges
    protects these devices.

Ähnliche Teilenummer - HBAT54

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hi-Sincerity Mocroelect...	HBAT54	35Kb / 4P	Silicon Schottky Barrier Double Diodes
	HBAT54A	35Kb / 4P	Silicon Schottky Barrier Double Diodes
	HBAT54C	35Kb / 4P	Silicon Schottky Barrier Double Diodes
	HBAT54S	35Kb / 4P	Silicon Schottky Barrier Double Diodes
	HBAT54X	35Kb / 4P	Silicon Schottky Barrier Double Diodes

Ähnliche Beschreibung - HBAT54

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NXP Semiconductors	BAT140	71Kb / 8P	Schottky barrier double diodes 1997 Oct 03
	BAT54	48Kb / 8P	Schottky barrier double diodes 2002 Mar 04
	BAT854W	56Kb / 8P	Schottky barrier (double) diodes 2001 Feb 27
Hi-Sincerity Mocroelect...	HBAT54X	35Kb / 4P	Silicon Schottky Barrier Double Diodes
NXP Semiconductors	BAT120	57Kb / 7P	Schottky barrier double diodes 2003 Aug 04
GTM CORPORATION	GBAT54	224Kb / 2P	Silicon Schottky Barrier Double Diodes .
Vishay Siliconix	HBAT54	111Kb / 5P	Silicon Schottky Barrier Double Diodes
E-Tech Electronics LTD	GBAT54-A-C-S	226Kb / 2P	Silicon Schottky Barrier Double Diodes
NXP Semiconductors	BAT160	192Kb / 7P	Schottky barrier double diodes 1999 Sep 20
Hi-Sincerity Mocroelect...	HBAT54	111Kb / 5P	Silicon Schottky Barrier Double Diodes

Über Hi-Sincerity Mocroelectronics

Hi-Sincerity Microelectronics is a semiconductor company based in Taiwan that designs and manufactures a wide range of analog and mixed-signal integrated circuits (ICs) for various applications. The company was founded in 1998 and has since become a leading provider of analog ICs in Asia.

Hi-Sincerity's product portfolio includes power management ICs, audio amplifiers, LED drivers, motor controllers, and other analog and mixed-signal ICs. The company's products are used in a variety of end markets, including consumer electronics, automotive, industrial, and communication systems.

One of Hi-Sincerity's strengths is its ability to develop customized solutions for customers with specific requirements. The company has a team of experienced engineers who work closely with customers to understand their needs and develop tailored solutions that meet their specifications.

In addition to its design and development capabilities, Hi-Sincerity also has strong manufacturing capabilities. The company operates a modern semiconductor fabrication facility in Taiwan that is capable of producing a wide range of analog and mixed-signal ICs using advanced process technologies.

Hi-Sincerity is committed to quality and reliability, and its products are widely recognized for their performance and reliability. The company has received numerous awards and certifications for its quality management systems and environmental management systems, including ISO 9001, ISO 14001, and IATF 16949.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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