The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in conventional bulk CMOS devices.

Features

• Electrically Screened to SMD # 5962-96766

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Hardened EPI-CMOS

- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)

- Transient Upset. . . . . . . . . . . . . . . . . .>1 x 108 rad(Si)/s

- Latch-Up Free. . . . . . . . . . . . . . . . . .>1 x 1012 rad(Si)/s

• Electrically Equivalent to Sandia SA 3001

• Pin Compatible with Intel 8155/56

• Bus Compatible with HS-80C85RH

• Single 5V Power Supply

• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max

• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz

• Completely Static Design

• Internal Address Latches

• Two Programmable 8-Bit I/O Ports

• One Programmable 6-Bit I/O Port

• Programmable 14-Bit Binary Counter/Timer

• Multiplexed Address and Data Bus

• Self Aligned Junction Isolated (SAJI) Process

• Military Temperature Range . . . . . . . . . . . -55℃ to 125℃