DESCRIPTION
µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting.
This IC is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials contribute excellent DC, AC performance. Thus, this process is utilized for 1 V voltage IC.

FEATURES
• 1 V supply voltage: VCC = 0.9 V to 2.0 V
• Low noise figure: 2.3 dBTYP. @ fin = 150 MHz (with external matching circuit to optimize NF)
• Low current consumption: ICC = 0.5 mATYP. @ VCC = 1.0 V
• Gain available frequency: fRF = 150 MHz to 330 MHz (with external matching circuit)
• High-density surface mounting: 6 pin mini mold