2SC3356 Datenblatt(PDF) - California Eastern Labs

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2SC3356 Datenblatt (PDF) - California Eastern Labs

2SC3356 Datasheet PDF - California Eastern Labs


Teilenummer	2SC3356

Download	2SC3356 Download

Filegröße	1747.26 Kbytes

Page	9 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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Bauteilbeschribung

NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

2SC3356 Datasheet (PDF)

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2SC3356 Datasheet PDF - California Eastern Labs


Teilenummer	2SC3356

Download	2SC3356 Click to download

Filegröße	1747.26 Kbytes

Page	9 Pages

Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

Logo

Bauteilbeschribung	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

2SC3356 Datenblatt (HTML) - California Eastern Labs

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2SC3356 Datasheet HTML 9Page - California Eastern Labs

2SC3356 Produktdetails

NPN Silicon RF Transistor

NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

Ähnliche Teilenummer - 2SC3356

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
Unisonic Technologies	2SC3356	105Kb / 3P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Guangdong Kexin Industr...	2SC3356	39Kb / 1P	NPN Silicon Epitaxial Transistor
SeCoS Halbleitertechnol...	2SC3356	251Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
Weitron Technology	2SC3356	430Kb / 3P	High-Frequency Amplifier Transistor NPN Silicon

Ähnliche Beschreibung - 2SC3356

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	2SC3357	218Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
	2SC4536	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
	2SC5012	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

Über California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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