DESCRIPTION
The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES
• Low current consumption : μPPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V
                                              μPPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V
                                              μ PPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V
• Supply voltage : VCC = 2.4 to 3.3 V
• High efficiency : μPPC8128TA ; PO (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz
                             μPPC8151TA ; PO (1 dB) = +2.5 dBm TYP. @ f = 1 GHz
                             μPPC8152TA ; PO (1 dB) = ð4.5 dBm TYP. @ f = 1 GHz
• Power gain variation : μPPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz
                                      μPPC8152TA ; GP = 23.0 dB TYP. @ f = 1 GHz
• Operating frequency : 100 to 1 900 MHz (Output port LC matching)
• Excellent isolation : μPPC8128TA ; ISL = 39 dB TYP. @ f = 1 GHz
                                : μPPC8151TA ; ISL = 38 dB TYP. @ f = 1 GHz
                                : μPPC8152TA ; ISL = 40 dB TYP. @ f = 1 GHz

APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones