| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
1SV216
|
110Kb / 2P |
VARIABLE CAPACITANCE DIODE (TV VHF UHF TUNER AFC)
|
KEC(Korea Electronics) |
KDV153
|
112Kb / 1P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
|
KDV245
|
386Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
|
KDV245E
|
383Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
|
KDV257E
|
63Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
|
KDV258
|
65Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
|
KDV273
|
65Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
|
KDV273E
|
63Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
|
KDV275
|
393Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
|
KDV273UL
|
431Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
