| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 ON Semiconductor |
NGB8207N
|
91Kb / 7P |
Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK
January, 2007 ??Rev. 0 |
|
NGB8207AN
|
153Kb / 7P |
Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK
July, 2009 ??Rev. 0 |
|
NGB8207AN
|
125Kb / 7P |
Ignition IGBT 20 A, 365 V, N.Channel D2PAK
December, 2011 ??Rev. 1 |
|
NGB8207N
|
132Kb / 7P |
Ignition IGBT 20 A, 365 V, N.Channel D2PAK
December, 2011 ??Rev. 1 |
 Roithner LaserTechnik G... |
APG2C1-385
|
380Kb / 4P |
Struture: InGaN Peak Wavelength: 365 nm Optical Output Power: typ. 60 mW Life Time 10.000 hours
|
|
UVLED375E-SMD
|
612Kb / 6P |
375 nm SMD UVLED
|
|
UVLED375-SMD
|
711Kb / 6P |
375 nm SMD UVLED
|
|
UVLED-365-330-SMD
|
322Kb / 7P |
High Power UVLED
|
|
UVLED-385-400-SMD
|
322Kb / 7P |
High Power UVLED
|
 JFW Industries, Inc. |
75S-365
|
27Kb / 1P |
75S-365
|