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ISL6353 Datenblatt (PDF) - Intersil Corporation

ISL6353 Datasheet PDF - Intersil Corporation
Teilenummer ISL6353
Download  ISL6353 Download
Filegröße   1286.59 Kbytes
Page   30 Pages
Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Bauteilbeschribung Multiphase PWM Regulator for VR12 DDR Memory Systems

ISL6353 Datasheet (PDF)

Go To PDF Page Download Datenblatt
ISL6353 Datasheet PDF - Intersil Corporation

Teilenummer ISL6353
Download  ISL6353 Click to download

Filegröße   1286.59 Kbytes
Page   30 Pages
Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Bauteilbeschribung Multiphase PWM Regulator for VR12 DDR Memory Systems

ISL6353 Datenblatt (HTML) - Intersil Corporation


ISL6353 Produktdetails

The ISL6353 is a three-phase PWM buck regulator controller for
VR12 DDR memory applications. The multi-phase implementation
results in better system performance, superior thermal
management, lower component cost and smaller PCB area.
The ISL6353 has two integrated power MOSFET drivers for
implementing a cost effective and space saving power
management solution.
The PWM modulator of the ISL6353 is based on Intersil’s Robust
Ripple Regulator™ (R3) technology. Compared with the traditional
multi-phase buck regulator, the R3 modulator commands variable
PWM switching frequency during load transients, achieving faster
transient response. R3 also naturally goes into pulse frequency
modulation operation in light load conditions to achieve higher light
load efficiency.
The ISL6353 is designed to be completely compliant with VR12
specifications. The ISL6353 has a serial VID (SVID) bus
communicating with the CPU. The output can be programmed for
1-, 2- or 3-phase interleaved operation. The output voltage and
power state can also be controlled independent of the serial VID
bus.
The ISL6353 has several other key features. It supports DCR
current sensing with a single NTC thermistor for DCR
temperature compensation or accurate resistor current sensing.
It also has remote voltage sense, adjustable switching frequency,
current monitor, OC/OV protection and power-good. Temperature
monitor and thermal alert is available too.

Features
• VR12 Serial Communications Bus
• Precision Voltage Regulation
- 5mV Steps with VID Fast/Slow Slew Rates
• Supports Two Current Sensing Methods
- Lossless Inductor DCR Current Sensing
- Precision Resistor Current Sensing
• Programmable 1, 2 or 3-Phase Operation
• Adaptive Body Diode Conduction Time Reduction
• Superior Noise Immunity and Transient Response
• Pin Programmable Output Voltage and Power State Mode
• Output Current Monitor and Thermal Monitor
• Differential Remote Voltage Sensing
• High Efficiency Across Entire Load Range
• Programmable Switching Frequency
• Resistor Programmable VBOOT, Power State Operation, SVID
Address Setting, IMAX
• Excellent Dynamic Current Balance Between Phases
• OCP/WOC, OVP, OT Alert, PGOOD
• Small Footprint 40 Ld 5x5 TQFN Package
• Pb-Free (RoHS Compliant)

Applications
• DDR Memory




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Über Intersil Corporation


Die Intersil Corporation war eine amerikanische Halbleiterfirma, die sich auf die Konstruktion und Herstellung von analogen und gemischten integrierten Schaltkreisen mit leistungsstarken und gemischten Signal-Signal spezialisierte.
Das Unternehmen wurde 1967 gegründet und war bekannt für sein Know -how in Bezug auf die Technologien des Stromverwaltung, Datenumwandlungsunternehmens und Funkfrequenz (RF).
Die Produkte von Intersil wurden in einer Vielzahl von Anwendungen wie Unterhaltungselektronik, Industrie, Telekommunikation sowie Luft- und Raumfahrt und Verteidigung verwendet.
Im Jahr 2016 wurde Intersil von der Renesas Electronics Corporation, einer japanischen Halbleiterfirma, übernommen.
Die Marke und Technologie von Intersil werden im Rahmen des Produktportfolios von Renesas weiterentwickelt und verkauft.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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