Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. PowerFLAT™5x6 1 2 3 4 AM15540v2 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3)

Features
■ Designed for automotive applications and AEC-Q101 qualified
■ Among the lowest RDS(on) on the market
■ Excellent figure of merit (FoM)
■ Low Crss/Ciss ratio for EMI immunity
■ High avalanche ruggedness
■ Wettable flank package

Applications
■ Switching applications