HFF5N60 Datenblatt(PDF) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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HFF5N60 Datenblatt (PDF) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HFF5N60 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD


Teilenummer	HFF5N60

Download	HFF5N60 Download

Filegröße	732.98 Kbytes

Page	6 Pages

Hersteller	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Bauteilbeschribung

N-Channel Enhancement Mode Field Effect Transistor

HFF5N60 Datasheet (PDF)

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HFF5N60 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD


Teilenummer	HFF5N60

Download	HFF5N60 Click to download

Filegröße	732.98 Kbytes

Page	6 Pages

Hersteller	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

Logo

Bauteilbeschribung	N-Channel Enhancement Mode Field Effect Transistor

HFF5N60 Datenblatt (HTML) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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HFF5N60 Produktdetails

General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features
• 4.5A, 600V(See Note), RDS(on) <2.5Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type: FQPF5N60C

Ähnliche Teilenummer - HFF5N60

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