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2SK3397 Datenblatt (PDF) - Toshiba Semiconductor

2SK3397 Datasheet PDF - Toshiba Semiconductor
Teilenummer 2SK3397
Download  2SK3397 Download

Filegröße   96.57 Kbytes
Page   3 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

2SK3397 Datasheet (PDF)

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2SK3397 Datasheet PDF - Toshiba Semiconductor

Teilenummer 2SK3397
Download  2SK3397 Click to download

Filegröße   96.57 Kbytes
Page   3 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

2SK3397 Datenblatt (HTML) - Toshiba Semiconductor

2SK3397 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3397 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3397 Datasheet HTML 3Page - Toshiba Semiconductor

2SK3397 Produktdetails

Relay Drive and DC-DC Converter Applications
Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 110 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)




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