RF Power Field Effect Transistor
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET

Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
   IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
   Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
   3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
   Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
   Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
      Output Power — 38 Watts Avg.
      Power Gain — 14 dB
      Efficiency — 26%
      IM3 — –37.5 dBc
      ACPR — –41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.